Performance Evaluations of Hard-Switching Interleaved DC/DC Boost Converter with New Generation Silicon Carbide MOSFETs
نویسندگان
چکیده
The emergence of PV inverter and Electric Vehicles (EVs) has created an increased demand for high power densities and high efficiency in power converters. Silicon carbide (SiC) is the candidate of choice to meet this demand, and it has, therefore, been the object of a growing interest over the past decade. The Boost converter is an essential part in most PV inverters and EVs. This paper presents a new generation of 1200V 20A SiC true MOSFET used in a 10KW hard-switching interleaved Boost converter with high switching frequency up to 100KHZ. It compares thermal and efficiency with Silicon high speed H3 IGBT. In both cases, results show a clear advantage for this new generation SiC MOSFET. Keywords—Silicon Cardbide; MOSFET; Interleaved; Hard Switching; Boost converter; IGBT
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